Reaction path dynamics and theoretical rate constants for the SiH₃Cl + H → SiH₂Cl + H₂ reaction by ab initio direct dynamics method

Ab initio direct dynamics method has been used to study the title reaction. Electronic structure information including geometries, gradients and force constants (Hessians) are calculated at the UQCISD/6-311+G** level. Energies along the minimum energy path are improved by a series of single-point G2//QCISD calculations. The changes of the geometries, vibratioanal frequencies, potential energies and total curvature along the reaction path are discussed. The rate constants in the temperature range 200-3000 K are calculated by canonical variational transition state theory with small-curvature tunneling correction (CVT/SCT) method. The results show that the variational effect is small and in the lower temperature range, the small curvature tunneling effect is important for the reaction.